SEMICONDUCTOR ELEMENT, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SAME

SEMICONDUCTOR ELEMENT, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SAME

Disclosed are a semiconductor element capable of adjusting a barrier height Æ Bn and performing zero-bias operation and impedance matching with an antenna for improving detection sensitivity of high-frequency RF electric signals, a method of manufacturing the same, and a semiconductor device having...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: SHIMIZU, Makoto, KOTAKA, Isamu, ITOH, Hiroki, ISHIBASHI, Tadao
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
ANTENNAS, i.e. RADIO AERIALS
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Disclosed are a semiconductor element capable of adjusting a barrier height Æ Bn and performing zero-bias operation and impedance matching with an antenna for improving detection sensitivity of high-frequency RF electric signals, a method of manufacturing the same, and a semiconductor device having the same. In the semiconductor element, a concentration of InGaAs (n-type InGaAs layer 2) is intentionally set to be high over a range for preventing the "change of the barrier height caused by the bias" described above up to a deep degeneration range. An electron Fermi level (E F ) increases from a band edge of InGaAs (n-type InGaAs layer 2) to a band edge of InP (InP depletion layer 3).