GALLIUM NITRIDE CRYSTAL

A device which includes at least one epitaxial semiconductor layer disposed on a single crystal substrate comprised of gallium nitride having a dislocation density less than about 10 4 per cm 2 , substantially no tilt boundaries, and an oxygen impurity level of less than 10 19 cm -3 . The electronic...

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Bibliographische Detailangaben
Hauptverfasser:	Park, Dong-Sil, D'Evelyn, Mark Philip, Narang, Kristi Jean, Hong, Huicong, Sandvik, Peter Micah, Rowland, Larry Burton, LeBoeuf, Steven Francis
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PERFORMING OPERATIONS PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH THEIR RELEVANT APPARATUS TRANSPORTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	A device which includes at least one epitaxial semiconductor layer disposed on a single crystal substrate comprised of gallium nitride having a dislocation density less than about 10 4 per cm 2 , substantially no tilt boundaries, and an oxygen impurity level of less than 10 19 cm -3 . The electronic device may be in the form of lighting applications such as light emitting diode (LED) and laser diode (LD) applications and devices such as GaN based transistors, rectifiers, thyristors, and cascode switches, and the like. Also provided is a method of forming a single crystal substrate comprised of gallium nitride having a dislocation density less than about 10 4 per cm 2 , substantially no tilt boundaries, and an oxygen impurity level of less than 10 19 cm -3 , and homoepitaxially forming at least one semiconductor layer on the substrate and an electronic device.