TRIGATE STATIC RANDOM-ACCESS MEMORY WITH INDEPENDENT SOURCE AND DRAIN ENGINEERING, AND DEVICES MADE THEREFROM

A static random-access memory (SRAM) circuit includes at least one access device on a first N-type fin (222) including source and drain sections for a pass region, at least one pull-up device on a P-type fin (226), and at least one pull-down device on a second N-type fin (222) including source-and-d...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	RACHMADY, Willy, PILLARISETTY, Ravi, DOYLE, Brian, CHAU, Robert S
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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