TRIGATE STATIC RANDOM-ACCESS MEMORY WITH INDEPENDENT SOURCE AND DRAIN ENGINEERING, AND DEVICES MADE THEREFROM

A static random-access memory (SRAM) circuit includes at least one access device on a first N-type fin (222) including source and drain sections for a pass region, at least one pull-up device on a P-type fin (226), and at least one pull-down device on a second N-type fin (222) including source-and-drain sections for a pull-down region. The SRAM circuit further comprises epitaxial structures (230, 236) on the source and drain sections of the pass and the pull-down devices, wherein the volume of the epitaxial structures on the source section and the drain section of the pass device (230) differs from the volume of the epitaxial structures on the source and drain section of the pull-down device (236) such that the external resistivity (Rext) for the pull-down region is lower than Rext for the pass region.