SPUTTERING DEVICE

There is provided a sputtering apparatus which is capable of forming, with good uniformity of film thickness distribution, an insulator film having further improved crystallinity. Inside a vacuum chamber 1 in which is provided an insulator target 4, there is disposed a stage 2 for holding a substrat...

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Bibliographische Detailangaben
Hauptverfasser:	MORIMOTO, Naoki, NANBA, Takahiro, YAMAMOTO, Hiroki, KOHARI, Shinji, KAMII, Masanobu, KONDO, Tomoyasu
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	There is provided a sputtering apparatus which is capable of forming, with good uniformity of film thickness distribution, an insulator film having further improved crystallinity. Inside a vacuum chamber 1 in which is provided an insulator target 4, there is disposed a stage 2 for holding a substrate W to be processed so as to face the insulator target. The sputtering apparatus has: a driving means 3 for driving to rotate the stage; a sputtering power source E1 for applying HF power to the insulator target; and a gas introduction means 13, 14 for introducing a rage gas into the vacuum chamber. The sputtering apparatus is characterized in that a distance d3 between the substrate and the insulator target is set to a range between 40 mm - 150 mm.