LOW-TEMPERATURE PASSIVATION OF FERROELECTRIC INTEGRATED CIRCUITS FOR ENHANCED POLARIZATION PERFORMANCE

Curing of a passivation layer applied to the surface of a ferroelectric integrated circuit so as to enhance the polarization characteristics of the ferroelectric structures. A passivation layer, such as a polyimide, is applied to the surface of the ferroelectric integrated circuit after fabrication...

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Hauptverfasser: WEN, Huang-Chun, SUMMERFELT, Scott, Robert, BAILEY, Richard, Allen, SAN, Kemal, Tamer, ACOSTA, Antonio, Guillermo, RODRIGUEZ, John, A
Format: Patent
Sprache:eng ; fre ; ger
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Zusammenfassung:Curing of a passivation layer applied to the surface of a ferroelectric integrated circuit so as to enhance the polarization characteristics of the ferroelectric structures. A passivation layer, such as a polyimide, is applied to the surface of the ferroelectric integrated circuit after fabrication of the active devices. The passivation layer is cured by exposure to a high temperature, below the Curie temperature of the ferroelectric material, for a short duration such as on the order of ten minutes. Variable frequency microwave energy may be used to effect such curing. The cured passivation layer attains a tensile stress state, and as a result imparts a compressive stress upon the underlying ferroelectric material. Polarization may be further enhanced by polarizing the ferroelectric material prior to the cure process.