METHOD FOR FABRICATING FINFET TECHNOLOGY WITH LOCALLY HIGHER FIN-TO-FIN PITCH

METHOD FOR FABRICATING FINFET TECHNOLOGY WITH LOCALLY HIGHER FIN-TO-FIN PITCH

The present invention relates to a semiconductor fin device (100) comprising at least three fins (102-106) arranged in parallel and protruding out from a substrate (111), the fins are separated from each other by shallow trench isolation structures (101), at least a first (102) and a second (106) of...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: HELLINGS, Geert, LINTEN, Dimitri, BOSCHKE, Roman, HORIGUCHI, Naoto
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The present invention relates to a semiconductor fin device (100) comprising at least three fins (102-106) arranged in parallel and protruding out from a substrate (111), the fins are separated from each other by shallow trench isolation structures (101), at least a first (102) and a second (106) of the fins protruding to a level higher than an upper surface (107) of the shallow trench isolation structures, the parallel fins are spaced with a first fin spacing (108), with at least one third fin arranged in between a first and a second fin, wherein in a non-protruding region (110) the third fin extends to a level below or equal to the upper surface of the shallow trench isolation structures.