VISCOUS DISPERSION LIQUID AND METHOD FOR PRODUCING SAME AND POROUS SEMICONDUCTOR ELECTRODE SUBSTRATE

Provided is a viscous dispersion liquid useful for forming a semiconductor porous film (porous semiconductor layer) by low-temperature deposition. The viscous dispersion liquid contains water as a dispersion medium, and titanium dioxide nanoparticles, wherein the viscous dispersion liquid has a soli...

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Hauptverfasser: KISHIMOTO, Shinzo, KOGURE, Hideo, AOYAMA, Kousuke, IKEGAMI, Masashi
Format: Patent
Sprache:eng ; fre ; ger
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Zusammenfassung:Provided is a viscous dispersion liquid useful for forming a semiconductor porous film (porous semiconductor layer) by low-temperature deposition. The viscous dispersion liquid contains water as a dispersion medium, and titanium dioxide nanoparticles, wherein the viscous dispersion liquid has a solid content concentration of 30% by mass to 60% by mass, the titanium dioxide nanoparticles include anatase crystalline titanium dioxide nanoparticles having an average particle diameter of 10 nm to 100 nm, and brookite crystalline titanium dioxide nanoparticles having an average particle diameter of 5 nm to 15 nm, and the viscous dispersion liquid has a viscosity of 10 Pa·s to 500 Pa·s at 25°C.