INTEGRATED CMOS AND MEMS SENSOR FABRICATION METHOD AND STRUCTURE

INTEGRATED CMOS AND MEMS SENSOR FABRICATION METHOD AND STRUCTURE

A method of providing a CMOS-MEMS structure is disclosed. The method comprises patterning a first top metal on a MEMS actuator substrate and a second top metal on a CMOS substrate. Each of the MEMS actuator substrate and the CMOS substrate include an oxide layer thereon. The method includes etching...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: SMEYS, Peter
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
MICROSTRUCTURAL TECHNOLOGY
PERFORMING OPERATIONS
PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
TRANSPORTING
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Beschreibung
Zusammenfassung:A method of providing a CMOS-MEMS structure is disclosed. The method comprises patterning a first top metal on a MEMS actuator substrate and a second top metal on a CMOS substrate. Each of the MEMS actuator substrate and the CMOS substrate include an oxide layer thereon. The method includes etching each of the oxide layers on the MEMS actuator substrate and the base substrate, utilizing a first bonding step to bond the first patterned top metal of the MEMS actuator substrate to the second patterned top metal of the base substrate. Finally the method includes etching an actuator layer into the MEMS actuator substrate and utilizing a second bonding step to bond the MEMS actuator substrate to a MEMS handle substrate.