P-DOPING OF GROUP III-NITRIDE BUFFER LAYER STRUCTURE ON A HETEROSUBSTRATE

P-DOPING OF GROUP III-NITRIDE BUFFER LAYER STRUCTURE ON A HETEROSUBSTRATE

The invention relates to an epitaxial group-III-nitride buffer-layer structure (100) on a heterosubstrate, wherein the buffer-layer structure (100) comprises at least one stress-management layer sequence S including an interlayer structure (530) arranged between and adjacent to a first and a second...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Murad, Saad, Lutgen, Stephan, Chitnis, Ashay
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The invention relates to an epitaxial group-III-nitride buffer-layer structure (100) on a heterosubstrate, wherein the buffer-layer structure (100) comprises at least one stress-management layer sequence S including an interlayer structure (530) arranged between and adjacent to a first and a second group-III-nitride layer (120, 140), wherein the interlayer structure (530) comprises a group-III-nitride interlayer material having a larger band gap than the materials of the first and second group-III-nitride layers (120, 140), and wherein a p-type-dopant-concentration profile drops, starting from at least 1x1018cm-3, by at least a factor of two in transition from the interlayer structure (530) to the first and second group-III-nitride layers (120, 140).