SEMICONDUCTOR DEVICE HAVING TIPLESS EPITAXIAL SOURCE/DRAIN REGIONS

A semiconductor device having an epitaxial silicon germanium source region in a first recess of the crystalline silicon substrate at a first side of the gate electrode, the epitaxial silicon germanium source region having an undercut profile of approximately 55 degrees with respect to an uppermost s...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	Bohr, Mark T
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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