SEMICONDUCTOR DEVICE HAVING TIPLESS EPITAXIAL SOURCE/DRAIN REGIONS

SEMICONDUCTOR DEVICE HAVING TIPLESS EPITAXIAL SOURCE/DRAIN REGIONS

A semiconductor device having an epitaxial silicon germanium source region in a first recess of the crystalline silicon substrate at a first side of the gate electrode, the epitaxial silicon germanium source region having an undercut profile of approximately 55 degrees with respect to an uppermost s...

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Bibliographische Detailangaben
1. Verfasser: Bohr, Mark T
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A semiconductor device having an epitaxial silicon germanium source region in a first recess of the crystalline silicon substrate at a first side of the gate electrode, the epitaxial silicon germanium source region having an undercut profile of approximately 55 degrees with respect to an uppermost surface of the crystalline silicon substrate, a portion of the epitaxial silicon germanium source region in contact with a first portion of a bottommost surface of the lower silicon dioxide portion of the gate dielectric.