SEMICONDUCTOR DEVICE HAVING TIPLESS EPITAXIAL SOURCE/DRAIN REGIONS

A semiconductor device having an epitaxial silicon germanium source region in a first recess of the crystalline silicon substrate at a first side of the gate electrode, the epitaxial silicon germanium source region having an undercut profile of approximately 55 degrees with respect to an uppermost s...

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1. Verfasser:	Bohr, Mark T
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	Bohr, Mark T
description	A semiconductor device having an epitaxial silicon germanium source region in a first recess of the crystalline silicon substrate at a first side of the gate electrode, the epitaxial silicon germanium source region having an undercut profile of approximately 55 degrees with respect to an uppermost surface of the crystalline silicon substrate, a portion of the epitaxial silicon germanium source region in contact with a first portion of a bottommost surface of the lower silicon dioxide portion of the gate dielectric.
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fullrecord	<record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP3151267B1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP3151267B1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP3151267B13</originalsourceid><addsrcrecordid>eNrjZHAKdvX1dPb3cwl1DvEPUnBxDfN0dlXwcAzz9HNXCPEM8HENDlZwDfAMcYzwdPRRCPYPDXJ21XcJcvT0Uwhydff09wvmYWBNS8wpTuWF0twMCm6uIc4euqkF-fGpxQWJyal5qSXxrgHGhqaGRmbmTobGRCgBANPdKxs</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SEMICONDUCTOR DEVICE HAVING TIPLESS EPITAXIAL SOURCE/DRAIN REGIONS</title><source>esp@cenet</source><creator>Bohr, Mark T</creator><creatorcontrib>Bohr, Mark T</creatorcontrib><description>A semiconductor device having an epitaxial silicon germanium source region in a first recess of the crystalline silicon substrate at a first side of the gate electrode, the epitaxial silicon germanium source region having an undercut profile of approximately 55 degrees with respect to an uppermost surface of the crystalline silicon substrate, a portion of the epitaxial silicon germanium source region in contact with a first portion of a bottommost surface of the lower silicon dioxide portion of the gate dielectric.</description><language>eng ; fre ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240612&DB=EPODOC&CC=EP&NR=3151267B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240612&DB=EPODOC&CC=EP&NR=3151267B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Bohr, Mark T</creatorcontrib><title>SEMICONDUCTOR DEVICE HAVING TIPLESS EPITAXIAL SOURCE/DRAIN REGIONS</title><description>A semiconductor device having an epitaxial silicon germanium source region in a first recess of the crystalline silicon substrate at a first side of the gate electrode, the epitaxial silicon germanium source region having an undercut profile of approximately 55 degrees with respect to an uppermost surface of the crystalline silicon substrate, a portion of the epitaxial silicon germanium source region in contact with a first portion of a bottommost surface of the lower silicon dioxide portion of the gate dielectric.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHAKdvX1dPb3cwl1DvEPUnBxDfN0dlXwcAzz9HNXCPEM8HENDlZwDfAMcYzwdPRRCPYPDXJ21XcJcvT0Uwhydff09wvmYWBNS8wpTuWF0twMCm6uIc4euqkF-fGpxQWJyal5qSXxrgHGhqaGRmbmTobGRCgBANPdKxs</recordid><startdate>20240612</startdate><enddate>20240612</enddate><creator>Bohr, Mark T</creator><scope>EVB</scope></search><sort><creationdate>20240612</creationdate><title>SEMICONDUCTOR DEVICE HAVING TIPLESS EPITAXIAL SOURCE/DRAIN REGIONS</title><author>Bohr, Mark T</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP3151267B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Bohr, Mark T</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Bohr, Mark T</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR DEVICE HAVING TIPLESS EPITAXIAL SOURCE/DRAIN REGIONS</title><date>2024-06-12</date><risdate>2024</risdate><abstract>A semiconductor device having an epitaxial silicon germanium source region in a first recess of the crystalline silicon substrate at a first side of the gate electrode, the epitaxial silicon germanium source region having an undercut profile of approximately 55 degrees with respect to an uppermost surface of the crystalline silicon substrate, a portion of the epitaxial silicon germanium source region in contact with a first portion of a bottommost surface of the lower silicon dioxide portion of the gate dielectric.</abstract><oa>free_for_read</oa></addata></record>
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recordid	cdi_epo_espacenet_EP3151267B1
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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	SEMICONDUCTOR DEVICE HAVING TIPLESS EPITAXIAL SOURCE/DRAIN REGIONS
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-29T06%3A19%3A35IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Bohr,%20Mark%20T&rft.date=2024-06-12&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EEP3151267B1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true