POLAR, CHIRAL, AND NON-CENTRO-SYMMETRIC FERROELECTRIC MATERIALS, MEMORY CELLS INCLUDING SUCH MATERIALS, AND RELATED DEVICES AND METHODS

POLAR, CHIRAL, AND NON-CENTRO-SYMMETRIC FERROELECTRIC MATERIALS, MEMORY CELLS INCLUDING SUCH MATERIALS, AND RELATED DEVICES AND METHODS

A ferroelectric memory device includes a plurality of memory cells. Each of the memory cells comprises at least one electrode and a ferroelectric crystalline material disposed proximate the at least one electrode. The ferroelectric crystalline material is polarizable by an electric field capable of...

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Bibliographische Detailangaben
Hauptverfasser: PANDEY, Sumeet C, BI, Lei, MEADE, Roy E, TAO, Qian, CHAVAN, Ashonita A
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A ferroelectric memory device includes a plurality of memory cells. Each of the memory cells comprises at least one electrode and a ferroelectric crystalline material disposed proximate the at least one electrode. The ferroelectric crystalline material is polarizable by an electric field capable of being generated by electrically charging the at least one electrode. The ferroelectric crystalline material comprises a polar and chiral crystal structure without inversion symmetry through an inversion center. The ferroelectric crystalline material does not consist essentially of an oxide of at least one of hafnium (Hf) and zirconium (Zr).