ANTIMONIDE-BASED HIGH BANDGAP TUNNEL JUNCTION FOR SEMICONDUCTOR DEVICES

ANTIMONIDE-BASED HIGH BANDGAP TUNNEL JUNCTION FOR SEMICONDUCTOR DEVICES

A tunnel junction for a semiconductor device is disclosed. The tunnel junction includes a n-doped tunnel layer and a p-doped tunnel layer. The p-doped tunnel layer is constructed of aluminum gallium arsenide antimonide (AlGaAsSb). A semiconductor device including the tunnel junction with the p-doped...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: HADDAD, Moran, CHIU, Philip T, KING, Richard R
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A tunnel junction for a semiconductor device is disclosed. The tunnel junction includes a n-doped tunnel layer and a p-doped tunnel layer. The p-doped tunnel layer is constructed of aluminum gallium arsenide antimonide (AlGaAsSb). A semiconductor device including the tunnel junction with the p-doped tunnel layer constructed of AlGaAsSb is also disclosed.