PRODUCTION PLANT FOR PRODUCING INTEGRATED CIRCUITS FROM SEMICONDUCTOR WAFERS AND WAFFLE ELEMENT FOR A PRODUCTION PLANT

A processing facility for manufacturing integrated circuits on semiconductor wafers is provided with at least one radiation generator that generates an EUV (extreme ultraviolet) radiation that is supplied to at least one lithography machine, housed in a factory building, for exposure of the semicond...

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Bibliographische Detailangaben
Hauptverfasser:	Blaschitz, Herbert, Eberle, Freyja, Köhler, Steffen, Schneider, Hartmut, Csátary, Peter
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	AIR-CONDITIONING, AIR-HUMIDIFICATION, VENTILATION, USE OF AIRCURRENTS FOR SCREENING APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS BLASTING BUILDING BUILDINGS OR LIKE STRUCTURES FOR PARTICULAR PURPOSES CEILINGS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY FENCING FINISHING WORK ON BUILDINGS, e.g. STAIRS, FLOORS FIXED CONSTRUCTIONS FLOORS GENERAL BUILDING CONSTRUCTIONS HEATING HOLOGRAPHY INSULATION OR OTHER PROTECTION OF BUILDINGS LIGHTING MASTS MATERIALS THEREFOR MECHANICAL ENGINEERING ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS RANGES ROOFS SEMICONDUCTOR DEVICES SWIMMING OR SPLASH BATHS OR POOLS TENTS OR CANOPIES, IN GENERAL VENTILATING WALLS, e.g. PARTITIONS WEAPONS
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Beschreibung
Zusammenfassung:	A processing facility for manufacturing integrated circuits on semiconductor wafers is provided with at least one radiation generator that generates an EUV (extreme ultraviolet) radiation that is supplied to at least one lithography machine, housed in a factory building, for exposure of the semiconductor wafers. The radiation generator is housed in a building or a building section separate from the factory building. At least one beam guide extends from the building or the building section to the factory building, wherein the EUV radiation is supplied from the building or the building section through the at least one beam guide to the factory building. At least one supply line branches off at an obtuse angle from the at least one beam guide inside the factory building, wherein at least a portion of the EUV radiation is supplied through the at least one supply line to the lithography machine.