METHOD FOR MANUFACTURING LIGHT EMITTING ELEMENT AND LIGHT EMITTING ELEMENT

Provided are a light emitting element manufacturing method capable of suppressing a change in the crystal quality of a group-III nitride semiconductor depending on the pitch of recesses or protrusions even when a substrate having recesses or protrusions formed in a front surface thereof in a period as to form a diffractive surface is used and a light emitting element manufactured by the manufacturing method. A light emitting element manufacturing method of allowing a semiconductor laminated part which includes a light emitting layer and comprises a group-III nitride semiconductor to grow on a substrate surface in which protrusions are formed in a period which is larger than an optical wavelength of light emitted from the light emitting layer and is smaller than a coherent length of the light, comprises: forming a buffer layer along the substrate surface having the protrusions; allowing crystal nuclei which have facet surfaces and are separated from each other to grow on the buffer layer such that the crystal nuclei include at least one protrusion; and allowing a planarization layer to grow on the buffer layer in which the crystal nuclei are formed.