SUBSTRATE CARRIER THAT CARRIES A SUBSTRATE ON EACH OF TWO BROAD SIDES OF THE SUBSTRATE CARRIER THAT FACE AWAY FROM EACH OTHER

A substrate carrier is configured to be arranged in a CVD or PVD reactor, in particular for the deposition of carbon nanotubes or graphene. The substrate carrier has a first broadside surface and a second broadside surface facing away from the first broad-side surface. The first broadside surface an...

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Bibliographische Detailangaben
Hauptverfasser:	TEO, Kenneth B. K, JOUVRAY, Alexandre, RUPESINGHE, Nalin L, RIPPINGTON, David Eric
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOUNDS THEREOF DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INORGANIC CHEMISTRY MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES METALLURGY NANOTECHNOLOGY NON-METALLIC ELEMENTS PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING
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Beschreibung
Zusammenfassung:	A substrate carrier is configured to be arranged in a CVD or PVD reactor, in particular for the deposition of carbon nanotubes or graphene. The substrate carrier has a first broadside surface and a second broadside surface facing away from the first broad-side surface. The first broadside surface and the second broadside surface of the substrate carrier each have a substrate accommodation zone. Fastening elements are provided within each of the substrate accommodation zones to secure a substrate or sections of a substrate to one or more of the broadside surfaces. A CVD reactor is further configured to receive the substrate carrier.