SPUTTERING TARGET COMPRISING Al-Te-Cu-Zr ALLOY, AND METHOD FOR PRODUCING SAME

An Al-Te-Cu-Zr alloy sputtering target, comprising 20 at% to 40 at% of Te, 5 at% to 20 at% of Cu, 5 at% to 15 at% of Zr and the remainder of Al, wherein a Te phase, a Cu phase and a CuTe phase are not present in a structure of the target. An object of the present invention is to provide an Al-Te-Cu-...

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Bibliographische Detailangaben
1. Verfasser:	KOIDO, Yoshimasa
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	ALLOYS BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FERROUS OR NON-FERROUS ALLOYS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TREATMENT OF ALLOYS OR NON-FERROUS METALS
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Beschreibung
Zusammenfassung:	An Al-Te-Cu-Zr alloy sputtering target, comprising 20 at% to 40 at% of Te, 5 at% to 20 at% of Cu, 5 at% to 15 at% of Zr and the remainder of Al, wherein a Te phase, a Cu phase and a CuTe phase are not present in a structure of the target. An object of the present invention is to provide an Al-Te-Cu-Zr alloy sputtering target capable of effectively reducing particle generation, nodule formation and the like upon sputtering and further capable of reducing oxygen contained in the target.