METHOD FOR FRAGMENTING A ROD-LIKE MATERIAL, IN PARTICULAR MADE OF POLYCRYSTALLINE SILICON

The invention relates to a method for fragmenting a rod-like semiconductor material (1), comprising the steps: a) providing a section (3) of the rod-like material (1) that is surrounded by a process fluid (2); b) arranging an electrode arrangement (4) comprising two electrodes (5, 6) in the region of this section (3) in such a way that the electrodes (5, 6) are immersed in the process fluid (2) and are at a distance from one another and are each at a distance from the rod-like material (1), c) generating high-voltage breakdowns through the rod-like material (1) and/or along the surface of the rod-like material (1) in the region of the electrodes (5, 6) by applying high-voltage pulses to the electrode arrangement (4), wherein, during the generation of the high-voltage breakdowns, a relative movement in the longitudinal direction of the rod-like material (1) is generated between the electrode arrangement (4) and the rod-like material (1). By virtue of the method according to the invention, it is possible to comminute rod-like semiconductor material into a fraction of relatively uniform size and shape with a low energy expenditure, and to maintain a low contamination with foreign material.