METHOF OF MANUFACTURING A DIODE HAVING A VERTICAL STRUCTURE
The invention relates to a light emitting device, comprising: an Al layer; an undoped GaN buffer layer on the Al layer; an n-GaN layer on the undoped GaN buffer layer; an active layer composing a multiple quantum well (MQW) layer on the n-GaN layer; a p-GaN layer on the active layer; and a transpare...
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| creator | YOO, Myung Cheol |
| description | The invention relates to a light emitting device, comprising: an Al layer; an undoped GaN buffer layer on the Al layer; an n-GaN layer on the undoped GaN buffer layer; an active layer composing a multiple quantum well (MQW) layer on the n-GaN layer; a p-GaN layer on the active layer; and a transparent conductive layer comprising indium-tin-oxide (ITO) on the p-GaN layer; wherein the undoped GaN buffer layer is thicker than the Al layer. |
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| language | eng ; fre ; ger |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | METHOF OF MANUFACTURING A DIODE HAVING A VERTICAL STRUCTURE |
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