METHOF OF MANUFACTURING A DIODE HAVING A VERTICAL STRUCTURE

METHOF OF MANUFACTURING A DIODE HAVING A VERTICAL STRUCTURE

The invention relates to a light emitting device, comprising: an Al layer; an undoped GaN buffer layer on the Al layer; an n-GaN layer on the undoped GaN buffer layer; an active layer composing a multiple quantum well (MQW) layer on the n-GaN layer; a p-GaN layer on the active layer; and a transpare...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: YOO, Myung Cheol
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The invention relates to a light emitting device, comprising: an Al layer; an undoped GaN buffer layer on the Al layer; an n-GaN layer on the undoped GaN buffer layer; an active layer composing a multiple quantum well (MQW) layer on the n-GaN layer; a p-GaN layer on the active layer; and a transparent conductive layer comprising indium-tin-oxide (ITO) on the p-GaN layer; wherein the undoped GaN buffer layer is thicker than the Al layer.