SEMICONDUCTOR LASER ELEMENT

A semiconductor laser device includes a well layer and a barrier layer formed of a III-V group semiconductor crystal containing As as a primary component. A V group element other than As has been introduced at a concentration of 0.02 to 5% into a V group site of the III-V group semiconductor crystal in at least one of the well layer and the barrier layer. A III group site of the III-V group semiconductor crystal in at least one of the well layer and the barrier layer contains Al. A semiconductor laser device suppressing generation of defects in a bulk of a semiconductor crystal and having less variation of characteristics is thereby provided.