POWER SEMICONDUCTOR MODULE

A power module (1, 10, 11, 12) includes a substrate (2), a first sub-module (3, 6, 8) and a second sub-module (4, 7, 9). The substrate (2) includes plural first conducting parts (20), plural second conducting parts (21) and a third conducting part (22). The first sub-module (3, 6, 8) is disposed on...

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Bibliographische Detailangaben
Hauptverfasser: Chen, Da-Jung, Lai, Yiu-Wai
Format: Patent
Sprache:eng ; fre ; ger
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Zusammenfassung:A power module (1, 10, 11, 12) includes a substrate (2), a first sub-module (3, 6, 8) and a second sub-module (4, 7, 9). The substrate (2) includes plural first conducting parts (20), plural second conducting parts (21) and a third conducting part (22). The first sub-module (3, 6, 8) is disposed on the substrate (2), and includes a first semiconductor switch (30), a first diode (31), a first electrode (320), a second electrode (321) and a third electrode (322). The first electrode (320) and the second electrode (321) are electrically connected with the corresponding first conducting parts (20). The third electrode (322) is electrically connected with the third conducting part (22). The second sub-module (4, 7, 9) is disposed on the substrate (2), and includes a second semiconductor switch (40), a second diode (41), a fourth electrode (420), a fifth electrode (421) and a sixth electrode (422). The fourth electrode (420) and the fifth electrode (421) are electrically connected with the corresponding second conducting parts (21). The sixth electrode (422) is electrically connected with the third conducting part (22).