DRIVE CIRCUIT AND METHOD FOR MOSFET

A circuit and a method of using a circuit to drive an insulated gate semiconductor device (12) comprising as a first terminal a gate (20) and at least second and third terminals (22, 24). The circuit comprises a charge storage device (14) and switching means (16, 116) connected in a series circuit t...

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Bibliographische Detailangaben
1. Verfasser:	BAREND, VISSER
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRONIC CIRCUITRY CHEMISTRY COMPOUNDS THEREOF ELECTRICITY INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS PULSE TECHNIQUE
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Beschreibung
Zusammenfassung:	A circuit and a method of using a circuit to drive an insulated gate semiconductor device (12) comprising as a first terminal a gate (20) and at least second and third terminals (22, 24). The circuit comprises a charge storage device (14) and switching means (16, 116) connected in a series circuit to the gate of the semiconductor device to transfer charge from the charge storage device to the gate of the semiconductor device so as to switch the semiconductor device between one of an on state and an off state and the other of the on state and the off state. Sufficient charge to switch the device on is transferred from the charge storage device to the gate during a charge transfer stage which is complete prior to a change in the current flow between the second and third terminals (22, 24) of the semiconductor device and during which a voltage on the gate exceeds and then remains above a threshold voltage between the gate and the third terminal of the device.