TITANIUM NITRIDE HARD MASK REMOVAL

TITANIUM NITRIDE HARD MASK REMOVAL

Composition, method and system for PVD TiN hard mask removal from 28/20nm pattern wafers have been disclosed. The composition uses peroxide as oxidizing agent for PVD TiN hard mask removal under slightly basic conditions. The composition comprises bulky or long chain organic amines or polyalkylamine...

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Hauptverfasser: Liu, Wen Dar, Chen, Tianniu, Casteel Jr., William Jack, Agarwal, Rajiv Krishan, Rao, Madhukar Bhaskara, Lee, Yi-Chia
Format: Patent
Sprache:eng ; fre ; ger
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Liu, Wen Dar
Chen, Tianniu
Casteel Jr., William Jack
Agarwal, Rajiv Krishan
Rao, Madhukar Bhaskara
Lee, Yi-Chia
description Composition, method and system for PVD TiN hard mask removal from 28/20nm pattern wafers have been disclosed. The composition uses peroxide as oxidizing agent for PVD TiN hard mask removal under slightly basic conditions. The composition comprises bulky or long chain organic amines or polyalkylamine to improve removal/etching selectivity of PVD TiN vs CVD TiN. The composition further comprises long chain organic acids or amines to maintain Co compatibility.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title TITANIUM NITRIDE HARD MASK REMOVAL
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