TITANIUM NITRIDE HARD MASK REMOVAL

Composition, method and system for PVD TiN hard mask removal from 28/20nm pattern wafers have been disclosed. The composition uses peroxide as oxidizing agent for PVD TiN hard mask removal under slightly basic conditions. The composition comprises bulky or long chain organic amines or polyalkylamine...

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Bibliographische Detailangaben
Hauptverfasser:	Liu, Wen Dar, Chen, Tianniu, Casteel Jr., William Jack, Agarwal, Rajiv Krishan, Rao, Madhukar Bhaskara, Lee, Yi-Chia
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	Composition, method and system for PVD TiN hard mask removal from 28/20nm pattern wafers have been disclosed. The composition uses peroxide as oxidizing agent for PVD TiN hard mask removal under slightly basic conditions. The composition comprises bulky or long chain organic amines or polyalkylamine to improve removal/etching selectivity of PVD TiN vs CVD TiN. The composition further comprises long chain organic acids or amines to maintain Co compatibility.