MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

In order to provide a semiconductor device with high reliability while manufacturing cost is being suppressed, dry etching for an insulating film is performed by using mixed gas containing at least CF 4 gas and C 3 H 2 F 4 gas as its components.

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Hauptverfasser: HORIKOSHI, KOTARO, KIKUCHI, YUJI, AKAISHI, MASATOSHI, HANAWA, TOSHIKAZU
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator HORIKOSHI, KOTARO
KIKUCHI, YUJI
AKAISHI, MASATOSHI
HANAWA, TOSHIKAZU
description In order to provide a semiconductor device with high reliability while manufacturing cost is being suppressed, dry etching for an insulating film is performed by using mixed gas containing at least CF 4 gas and C 3 H 2 F 4 gas as its components.
format Patent
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
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