MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

In order to provide a semiconductor device with high reliability while manufacturing cost is being suppressed, dry etching for an insulating film is performed by using mixed gas containing at least CF 4 gas and C 3 H 2 F 4 gas as its components.

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Bibliographische Detailangaben
Hauptverfasser:	HORIKOSHI, KOTARO, KIKUCHI, YUJI, AKAISHI, MASATOSHI, HANAWA, TOSHIKAZU
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	In order to provide a semiconductor device with high reliability while manufacturing cost is being suppressed, dry etching for an insulating film is performed by using mixed gas containing at least CF 4 gas and C 3 H 2 F 4 gas as its components.