METHOD FOR TREATMENT OF RECESSED STRUCTURES IN DIELECTRIC MATERIALS FOR SMEAR REMOVAL

The present invention relates to a method for treatment of recessed structures in a dielectric material for smear removal during the manufacture of printed circuit boards, IC substrates and the like. The dielectric material is contacted with an aqueous solution comprising 60 to 80 wt.-% sulfuric aci...

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Bibliographische Detailangaben
Hauptverfasser:	WIESE, Stefanie, STEINHÄUSER, Edith, STAMP, Lutz, SCHIEMANN, Julia, GREGORIADES, Laurence John
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS CHEMICAL SURFACE TREATMENT CHEMISTRY CLEANING OR DEGREASING OF METALLIC MATERIAL BY CHEMICALMETHODS OTHER THAN ELECTROLYSIS COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS METALLURGY PRINTED CIRCUITS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The present invention relates to a method for treatment of recessed structures in a dielectric material for smear removal during the manufacture of printed circuit boards, IC substrates and the like. The dielectric material is contacted with an aqueous solution comprising 60 to 80 wt.-% sulfuric acid and 0.04 to 0.66 mol/I peroxodisulfate ions peroxodisulfate ions. Smear is removed from the recessed structures by the method according to the present invention without penetration of process chemicals into the dielectric material and a sufficiently low copper etching rate is achieved.