ELECTRO-STATIC DISCHARGE PROTECTION FOR INTEGRATED CIRCUITS

Techniques for improving electro-static discharge (ESD) performance in integrated circuits (IC's). In an aspect, one or more protective diodes are provided between various nodes of the IC. For example, protective diode(s) may be provided between the drain and gate of an amplifier input transist...

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Bibliographische Detailangaben
Hauptverfasser: ABDEL GHANY, Ehab Ahmed Sobhy, GUDEM, Prasad Srinivasa Siva, YOUSSEF, Ahmed Abdel Monem, CHANG, Li-Chung
Format: Patent
Sprache:eng ; fre ; ger
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Zusammenfassung:Techniques for improving electro-static discharge (ESD) performance in integrated circuits (IC's). In an aspect, one or more protective diodes are provided between various nodes of the IC. For example, protective diode(s) may be provided between the drain and gate of an amplifier input transistor, and/or between the drain and ground, etc. In certain exemplary embodiments, the amplifier may be a cascode amplifier. Further aspects for effectively dealing with ESD phenomena are described.