TELLURIUM ENRICHED BACK CONTACT PASTE WITH COPPER

TELLURIUM ENRICHED BACK CONTACT PASTE WITH COPPER

Methods for forming a back contact on a thin film photovoltaic device are provided that include applying a conductive paste onto a surface defined by a p-type absorber layer (e.g., comprising cadmium telluride) of a p-n junction and curing the conductive paste to form a conductive coating on the sur...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: COLE, Michael, Christopher, CORWINE, Caroline, Rae, CLARK, Laura, Anne, LUCAS, Tammy, Jane, FELDMAN-PEABODY, Scott, Daniel
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
CABLES
CONDUCTORS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INSULATORS
SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Methods for forming a back contact on a thin film photovoltaic device are provided that include applying a conductive paste onto a surface defined by a p-type absorber layer (e.g., comprising cadmium telluride) of a p-n junction and curing the conductive paste to form a conductive coating on the surface defined by a p-type absorber layer of the p-n junction. The conductive paste can include a conductive material, a solvent system, and a binder such that during curing an acid from the conductive paste reacts to enrich the surface with tellurium while copper is deposited onto the Te enriched surface. The acid is then substantially consumed during curing.