UNCOOLED INFRARED DETECTOR AND METHODS FOR MANUFACTURING THE SAME

UNCOOLED INFRARED DETECTOR AND METHODS FOR MANUFACTURING THE SAME

This disclosure discusses an infrared detector manufactured from a foundry-defined silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) wafer, the infrared detector comprising a plurality of walls forming a through well defining a first opening and a second opening opposing the...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: EMINOGLU, Selim, AKIN, Tayfun
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
COLORIMETRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT
MEASURING
PHYSICS
RADIATION PYROMETRY
SEMICONDUCTOR DEVICES
TESTING
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Beschreibung
Zusammenfassung:This disclosure discusses an infrared detector manufactured from a foundry-defined silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) wafer, the infrared detector comprising a plurality of walls forming a through well defining a first opening and a second opening opposing the first opening; an infrared sensor configured to detect an infrared wave passing through one of the first opening or the second opening of the through well; and a support arm connecting the sensor to at least one of the plurality of walls so as to suspend the infrared sensor within the through well and adjacent to the first opening.