MANNER OF PRODUCTION OF A WHITE LIGHT EMITTING DIODE WITH SINGLE CRYSTAL PHOSPHOR

According to the invention, the diode with a single crystal phosphor placed over the chip selected from the InGaN, GaN or AlGaN group comprises the fact that the single crystal phosphor (21) is created from the monocrystalline ingot (51), created by LuYAG or YAP hosts, doped with the atoms selected...

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Bibliographische Detailangaben
Hauptverfasser:	KUBÁT, Jan, POLÁK, Jan, HOUZVICKA, Jindrich
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	ADHESIVES AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH DYES ELECTRIC HEATING ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS POLISHES PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	According to the invention, the diode with a single crystal phosphor placed over the chip selected from the InGaN, GaN or AlGaN group comprises the fact that the single crystal phosphor (21) is created from the monocrystalline ingot (51), created by LuYAG or YAP hosts, doped with the atoms selected from the Ce3+, Ti3+, Eu2+, C, Gd3+ or Ga3+ group, grown from the melt with the method selected from the Czochralski, HEM, Badgasarov, Kyropoulos or EFG group, when the Lu3+, Y3+ and Al3+ atoms can be replaced in the host up to the amount of 99.9% with the B3+, Gd3+ or Ga3+ atoms.