BIASING CIRCUIT FOR A MEMS ACOUSTIC TRANSDUCER WITH REDUCED START-UP TIME
Described herein is a MEMS acoustic transducer device (42) having: a capacitive microelectromechanical sensing structure (1) ; and a biasing circuit (20), including a voltage-boosting circuit (9) that supplies a boosted voltage (V CP ) on an output terminal (9a), and an insulating circuit element (1...
Gespeichert in:
Hauptverfasser: | , , , , , |
---|---|
Format: | Patent |
Sprache: | eng ; fre ; ger |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | Described herein is a MEMS acoustic transducer device (42) having: a capacitive microelectromechanical sensing structure (1) ; and a biasing circuit (20), including a voltage-boosting circuit (9) that supplies a boosted voltage (V CP ) on an output terminal (9a), and an insulating circuit element (10), defining a high impedance, set between the output terminal (9a) and a terminal of the sensing structure (1), which defines a first high-impedance node (N 1 ) associated to the insulating circuit element (10). The biasing circuit (20) has: a pre-charge stage (24) that generates at least one first pre-charge voltage (V pre1 ) on a first output (Out 1 ) thereof, as a function of, and distinct from, the boosted voltage (V CP ); and at least one first switch element (SW 1 ), set between the first output (Out 1 ) and the first high-impedance node (N 1 ). The first switch element (SW 1 ) is operable for selectively connecting the first high-impedance node (N 1 ) to the first output (Out 1 ), during a phase of start-up of the biasing circuit (20), for biasing the first high-impedance node to the first pre-charge voltage. |
---|