SAPPHIRE RIBBONS AND APPARATUS AND METHOD FOR PRODUCING A PLURALITY OF SAPPHIRE RIBBONS HAVING IMPROVED DIMENSIONAL STABILITY

The present disclosure is directed to an apparatus and method for growing a sapphire sheet via edge-defined film-fed growth (EFG) including an angled heat shield with respect to the a side surface of a die tip. The present disclosure is further directed to an sapphire sheets and batches of such shee...

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Bibliographische Detailangaben
Hauptverfasser:	JONES, CHRISTOPHER, D, LOCHER, JOHN, WALTER, MACK, GUILFORD, L, III, OUELLETTE, MARC, COLLINS, JOSEPH, M, BUZNIAK, JAN, J, JENNINGS, ABBIE, M
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM,CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THERARE-EARTH METALS CRYSTAL GROWTH INORGANIC CHEMISTRY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	The present disclosure is directed to an apparatus and method for growing a sapphire sheet via edge-defined film-fed growth (EFG) including an angled heat shield with respect to the a side surface of a die tip. The present disclosure is further directed to an sapphire sheets and batches of such sheets having features such as a particular maximum low spot thickness.