SOURCE SELECT TRANSISTOR FOR VERTICAL NAND STRING COMPRISING TUNGSTEN SILICIDE TO CONTROL ON CURRENT AND CELL PILLAR FABRICATION

SOURCE SELECT TRANSISTOR FOR VERTICAL NAND STRING COMPRISING TUNGSTEN SILICIDE TO CONTROL ON CURRENT AND CELL PILLAR FABRICATION

A non-volatile memory device and a method for forming the non-volatile memory device are disclosed. During fabrication of the memory device, a tungsten salicide is utilized as an etch-stop layer in place of a conventionally used aluminum oxide to form channel pillars having a high aspect ratio. Use...

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Bibliographische Detailangaben
Hauptverfasser: PARAT, Krishna K, SIMSEK-EGE, Fatma A
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A non-volatile memory device and a method for forming the non-volatile memory device are disclosed. During fabrication of the memory device, a tungsten salicide is utilized as an etch-stop layer in place of a conventionally used aluminum oxide to form channel pillars having a high aspect ratio. Use of the tungsten salicide is useful for eliminating an undesired etch-stop recess and an undesired floating gate that is formed when an Al oxide etch-stop layer is conventionally used.