MULTI-LAYER STRUCTURE, CAPACITOR ELEMENT, AND METHOD FOR MANUFACTURING SAME

The multilayered structure includes: a substrate (10); a buffer layer (12) disposed on the substrate (10); a lower electrode (14) disposed on the buffer layer (12), and a dielectric layer (16) disposed on the lower electrode (14), the dielectric layer composed of nitrides. Furthermore, the capacitor...

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Bibliographische Detailangaben
Hauptverfasser: KANETAKE, Yasuo, TSURUMI, Naoaki
Format: Patent
Sprache:eng ; fre ; ger
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Zusammenfassung:The multilayered structure includes: a substrate (10); a buffer layer (12) disposed on the substrate (10); a lower electrode (14) disposed on the buffer layer (12), and a dielectric layer (16) disposed on the lower electrode (14), the dielectric layer composed of nitrides. Furthermore, the capacitor element includes: an upper electrode (18) disposed on the dielectric layer (16), a first terminal electrode connected to the lower electrode (14), and a second terminal electrode connected to the upper electrode (18). There is provided a capacitor element excellent in high-temperature stability, and a fabrication method of such a capacitor element.