SEMICONDUCTOR DEVICE

In order to provide a semiconductor device having high ESD tolerance, a semiconductor device (IC) is formed so that: a ground voltage wiring (22a) is electrically connected at one end in a wiring direction thereof to a wiring (22b) extending from a ground voltage pad used for external connection; an...

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Bibliographische Detailangaben
Hauptverfasser:	SHIMAZAKI, KOICHI, HIROSE, YOSHITSUGU
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	In order to provide a semiconductor device having high ESD tolerance, a semiconductor device (IC) is formed so that: a ground voltage wiring (22a) is electrically connected at one end in a wiring direction thereof to a wiring (22b) extending from a ground voltage pad used for external connection; an input voltage wiring (23a) is electrically connected at one end in a wiring direction thereof to a wiring (23b) extending from an input voltage pad used for external connection; and the one end of the ground voltage wiring (22a) and the one end of the input voltage wiring (23a) are substantially opposed to each other across a center of an NMOS transistor (10).