METHOD AND SYSTEM FOR TRANSIENT VOLTAGE SUPPRESSION DEVICES WITH ACTIVE CONTROL

A transient voltage suppression (TVS) device (102) and a method of forming the TVS device (102) are provided. The transient voltage suppression (TVS) device (102) includes a first layer (106) of wide band gap semiconductor material formed of a first conductivity type material, a second layer (108) o...

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Bibliographische Detailangaben
Hauptverfasser: Bolotnikov, Alexander Viktorovich, Kirstein, Joe Walter, Sandvik, Peter Micah, Kashyap, Avinash Srikrishnan
Format: Patent
Sprache:eng ; fre ; ger
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Zusammenfassung:A transient voltage suppression (TVS) device (102) and a method of forming the TVS device (102) are provided. The transient voltage suppression (TVS) device (102) includes a first layer (106) of wide band gap semiconductor material formed of a first conductivity type material, a second layer (108) of wide band gap semiconductor material formed of a second conductivity type material over at least a portion of the first layer (106), and a third layer (110) of wide band gap semiconductor material formed of the first conductivity type material over at least a portion of the second layer (108). The TVS device (102) also includes a conductive path (121) electrically coupled between the second layer (108) and an electrical connection to a circuit external to the TVS device (102), the conductive path (121) configured to permit controlling a turning on of the TVS device (102) at less than a breakdown voltage of the TVS device (102).