Method for forming memory device
A method includes forming a resistance-switching layer (104) and a second electrode (106) over a first electrode (102). The method includes applying a forming voltage to the resistance-switching layer such that the resistance of the resistance-switching layer is decreased. The method includes applyi...
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| Format: | Patent |
| Sprache: | eng ; fre ; ger |
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| Zusammenfassung: | A method includes forming a resistance-switching layer (104) and a second electrode (106) over a first electrode (102). The method includes applying a forming voltage to the resistance-switching layer such that the resistance of the resistance-switching layer is decreased. The method includes applying an initial reset voltage to the first electrode or the second electrode such that the resistance of the resistance-switching layer is increased. The method includes applying a first set voltage to the first electrode or the second electrode such that the resistance of the resistance-switching layer is decreased. The method includes applying a second reset voltage to first electrode or the second electrode such that the resistance of the resistance-switching layer is increased. The method includes applying a second set voltage to first electrode or the second electrode such that the resistance of the resistance-switching layer is decreased. The second set voltage is lower than the first set voltage. |
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