Turn-off power semiconductor device

The invention relates to a turn-off power semiconductor device (100) comprising a plurality of thyristor cells (2). In the turn-off power semiconductor device (100) of the invention, the distance between a gate electrode (20) and a cathode semiconductor layer portion (22) depends on the distance of the thyristor cell (2) from a common gate contact (40). Specifically, for each pair of a first thyristor cell and a second thyristor cell of the plurality of thyristor cells (2), for which the distance between the first thyristor cell and the common gate contact (40) is smaller than the distance between the second thyristor cell and the common gate contact (40), a minimum distance between the gate electrode (20) and the cathode semiconductor layer portion (22) is smaller in the second thyristor cell than in the first thyristor cell.