PHOTOSEMICONDUCTOR ELECTRODE, PHOTOELECTROCHEMICAL CELL, AND ENERGY SYSTEM
A photosemiconductor electrode (400) of the present invention includes a conductor (410) and a photosemiconductor layer (first semiconductor layer) (420) provided on the conductor (410). The photosemiconductor layer (420) includes a photosemiconductor (e.g., a photosemiconductor film (421)) and an o...
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Format: | Patent |
Sprache: | eng ; fre ; ger |
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Zusammenfassung: | A photosemiconductor electrode (400) of the present invention includes a conductor (410) and a photosemiconductor layer (first semiconductor layer) (420) provided on the conductor (410). The photosemiconductor layer (420) includes a photosemiconductor (e.g., a photosemiconductor film (421)) and an oxide containing iridium element (e.g., iridium oxide (422)). The Fermi level of the oxide containing iridium element is more negative than the Fermi level of the photosemiconductor and is more negative than -4.44 eV, with respect to the vacuum level. |
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