HIGH-PURITY COPPER-COBALT ALLOY SPUTTERING TARGET

A high purity copper-cobalt alloy sputtering target containing 0.1 to 20 at% of Co, and remainder being Cu and unavoidable impurities, wherein a size (dimension) of precipitates in the target structure is 10 µm or less, and a number of precipitates is 500 precipitates/mm 2 or less. It is thereby pos...

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Bibliographische Detailangaben
Hauptverfasser:	NAGATA Kenichi, OTSUKI Tomio
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	ALLOYS BASIC ELECTRIC ELEMENTS CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS ANDNON-FERROUS ALLOYS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY FERROUS OR NON-FERROUS ALLOYS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TREATMENT OF ALLOYS OR NON-FERROUS METALS
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Beschreibung
Zusammenfassung:	A high purity copper-cobalt alloy sputtering target containing 0.1 to 20 at% of Co, and remainder being Cu and unavoidable impurities, wherein a size (dimension) of precipitates in the target structure is 10 µm or less, and a number of precipitates is 500 precipitates/mm 2 or less. It is thereby possible to provide a high purity copper-cobalt alloy sputtering target capable of inhibiting the generation of particles during sputtering, and in particular improving the yield and reliability of semiconductor products that are being subject to further miniaturization and higher integration.