METHOD FOR SUPPLYING SOURCE GAS FOR PRODUCING POLYCRYSTALLINE SILICON AND POLYCRYSTALLINE SILICON
In a method according to the present invention, an occurrence ratio of popcorn is suppressed by adjusting kinetic energy of a source gas supplied to a reaction furnace for producing polycrystalline silicon with a Siemens method (flow velocity and a supply amount of the source gas in source gas suppl...
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Format: | Patent |
Sprache: | eng ; fre ; ger |
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Zusammenfassung: | In a method according to the present invention, an occurrence ratio of popcorn is suppressed by adjusting kinetic energy of a source gas supplied to a reaction furnace for producing polycrystalline silicon with a Siemens method (flow velocity and a supply amount of the source gas in source gas supply nozzle ejection ports). Specifically, in performing deposition reaction of the polycrystalline silicon under a reaction pressure of 0.25 MPa to 0.9 MPa, when flow velocity of the source gas in gas supply ports of the source gas supply nozzles (9) is represented as u (m/sec), a source gas supply amount is represented as Q (kg/sec), and an inner volume of the reaction furnace (100) is represented as V (m 3 ), values of u and Q of each of the source gas supply nozzles(9) are set such that a total (Q×u 2 /V) of values Q×u 2 /V is equal to or larger than 2500 (kg/m·sec 3 ). |
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