Method of producing a semiconductor device with protruding contacts
The semiconductor device comprises a semiconductor substrate (1), a dielectric layer (2) on or above the substrate (1), a wiring (3) comprising electrical conductors (4, 5, 6, 7) arranged in the dielectric layer (2), and a contact pad (8) formed by one of the conductors (4). A further conductor (9)...
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| creator | Rohracher, Karl Schrems, Martin Kraft, Jochen |
| description | The semiconductor device comprises a semiconductor substrate (1), a dielectric layer (2) on or above the substrate (1), a wiring (3) comprising electrical conductors (4, 5, 6, 7) arranged in the dielectric layer (2), and a contact pad (8) formed by one of the conductors (4). A further conductor (9) of electrically conductive material is arranged in the dielectric layer (2) in contact with a further one of the conductors (5), separate from the contact pad (8). The further conductor (9) protrudes from the dielectric layer (2) on a side opposite to the substrate. |
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A further conductor (9) of electrically conductive material is arranged in the dielectric layer (2) in contact with a further one of the conductors (5), separate from the contact pad (8). The further conductor (9) protrudes from the dielectric layer (2) on a side opposite to the substrate.</description><language>eng ; fre ; ger</language><subject>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES ; MEASURING ; PHYSICS ; TESTING</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180117&DB=EPODOC&CC=EP&NR=2905611B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180117&DB=EPODOC&CC=EP&NR=2905611B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Rohracher, Karl</creatorcontrib><creatorcontrib>Schrems, Martin</creatorcontrib><creatorcontrib>Kraft, Jochen</creatorcontrib><title>Method of producing a semiconductor device with protruding contacts</title><description>The semiconductor device comprises a semiconductor substrate (1), a dielectric layer (2) on or above the substrate (1), a wiring (3) comprising electrical conductors (4, 5, 6, 7) arranged in the dielectric layer (2), and a contact pad (8) formed by one of the conductors (4). A further conductor (9) of electrically conductive material is arranged in the dielectric layer (2) in contact with a further one of the conductors (5), separate from the contact pad (8). The further conductor (9) protrudes from the dielectric layer (2) on a side opposite to the substrate.</description><subject>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</subject><subject>MEASURING</subject><subject>PHYSICS</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHD2TS3JyE9RyE9TKCjKTylNzsxLV0hUKE7NzUzOzwPyS_KLFFJSyzKTUxXKM0syQKpKikpTQMqACkoSk0uKeRhY0xJzilN5oTQ3g4Kba4izh25qQX58anFBYnJqXmpJvGuAkaWBqZmhoZOhMRFKAEROMn4</recordid><startdate>20180117</startdate><enddate>20180117</enddate><creator>Rohracher, Karl</creator><creator>Schrems, Martin</creator><creator>Kraft, Jochen</creator><scope>EVB</scope></search><sort><creationdate>20180117</creationdate><title>Method of producing a semiconductor device with protruding contacts</title><author>Rohracher, Karl ; Schrems, Martin ; Kraft, Jochen</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP2905611B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2018</creationdate><topic>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</topic><topic>MEASURING</topic><topic>PHYSICS</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>Rohracher, Karl</creatorcontrib><creatorcontrib>Schrems, Martin</creatorcontrib><creatorcontrib>Kraft, Jochen</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Rohracher, Karl</au><au>Schrems, Martin</au><au>Kraft, Jochen</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method of producing a semiconductor device with protruding contacts</title><date>2018-01-17</date><risdate>2018</risdate><abstract>The semiconductor device comprises a semiconductor substrate (1), a dielectric layer (2) on or above the substrate (1), a wiring (3) comprising electrical conductors (4, 5, 6, 7) arranged in the dielectric layer (2), and a contact pad (8) formed by one of the conductors (4). A further conductor (9) of electrically conductive material is arranged in the dielectric layer (2) in contact with a further one of the conductors (5), separate from the contact pad (8). The further conductor (9) protrudes from the dielectric layer (2) on a side opposite to the substrate.</abstract><oa>free_for_read</oa></addata></record> |
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| language | eng ; fre ; ger |
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| subjects | INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING PHYSICS TESTING |
| title | Method of producing a semiconductor device with protruding contacts |
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