Method of producing a semiconductor device with protruding contacts

The semiconductor device comprises a semiconductor substrate (1), a dielectric layer (2) on or above the substrate (1), a wiring (3) comprising electrical conductors (4, 5, 6, 7) arranged in the dielectric layer (2), and a contact pad (8) formed by one of the conductors (4). A further conductor (9) of electrically conductive material is arranged in the dielectric layer (2) in contact with a further one of the conductors (5), separate from the contact pad (8). The further conductor (9) protrudes from the dielectric layer (2) on a side opposite to the substrate.