MONITOR SYSTEM FOR DETERMINING ORIENTATIONS OF MIRROR ELEMENTS AND EUV LITHOGRAPHY SYSTEM

An EUV lithography system has an EUV beam path and a monitor beam path. The EUV beam path includes a mirror system having plurality of mirror elements, the orientations of which can be changed. The monitor beam path includes a monitor radiation source, a screen and a spatially resolving detector. Th...

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Bibliographische Detailangaben
Hauptverfasser:	EISENMENGER, Johannes, PATRA, Michael, WANGLER, Johannes, DEGUENTHER, Markus
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR MEASURING MEASURING ANGLES MEASURING AREAS MEASURING IRREGULARITIES OF SURFACES OR CONTOURS MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS OPTICS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS TESTING TESTING STATIC OR DYNAMIC BALANCE OF MACHINES ORSTRUCTURES TESTING STRUCTURES OR APPARATUS NOT OTHERWISE PROVIDED FOR
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Beschreibung
Zusammenfassung:	An EUV lithography system has an EUV beam path and a monitor beam path. The EUV beam path includes a mirror system having plurality of mirror elements, the orientations of which can be changed. The monitor beam path includes a monitor radiation source, a screen and a spatially resolving detector. The mirror system is arranged in the monitor beam path between the monitor radiation source and the screen.