III-V NANOWIRE FIELD EFFECT TRANSISTORS WITH CONFORMAL METAL GATE ELECTRODE AND NITROGEN DOPING OF GATE DIELECTRIC INTERFACE

III-V NANOWIRE FIELD EFFECT TRANSISTORS WITH CONFORMAL METAL GATE ELECTRODE AND NITROGEN DOPING OF GATE DIELECTRIC INTERFACE

A high-k gate dielectric interface with a group III-V semiconductor surface of a non-planar transistor channel region is non-directionally doped with nitrogen. In nanowire embodiments, a non-directional nitrogen doping of a high-k gate dielectric interface is performed before or concurrently with a...

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Bibliographische Detailangaben
Hauptverfasser: CLENDENNING, Scott B, THEN, Han Wui, RADOSAVLJEVIC, Marko, DEWEY, Gilbert, PILLARISETTY, Ravi, CHAU, Robert S
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES
NANOTECHNOLOGY
PERFORMING OPERATIONS
SEMICONDUCTOR DEVICES
SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
TRANSPORTING
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Beschreibung
Zusammenfassung:A high-k gate dielectric interface with a group III-V semiconductor surface of a non-planar transistor channel region is non-directionally doped with nitrogen. In nanowire embodiments, a non-directional nitrogen doping of a high-k gate dielectric interface is performed before or concurrently with a conformal gate electrode deposition through exposure of the gate dielectric to liquid, vapor, gaseous, plasma, or solid state sources of nitrogen. In embodiments, a gate electrode metal is conformally deposited over the gate dielectric and an anneal is performed to uniformly accumulate nitrogen within the gate dielectric along the non-planar III-V semiconductor interface.