COMPOSITE SUBSTRATE AND METHOD FOR PRODUCING SAME

Provided is a composite substrate which has a high-performance semiconductor layer. A composite substrate (1) of the present invention comprises: a supporting substrate (10) which is formed of an insulating material; a semiconductor layer (20) which is formed of a single crystal semiconductor that i...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	KITADA, Masanobu, MATSUSHITA, Hideki
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS CLADDING OR PLATING BY SOLDERING OR WELDING CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SOLDERING OR UNSOLDERING TRANSPORTING WELDING WORKING BY LASER BEAM
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Beschreibung
Zusammenfassung:	Provided is a composite substrate which has a high-performance semiconductor layer. A composite substrate (1) of the present invention comprises: a supporting substrate (10) which is formed of an insulating material; a semiconductor layer (20) which is formed of a single crystal semiconductor that is superposed on and joined to the supporting substrate (10); and interfacial inclusions (30) which are present in the interface between the supporting substrate (10) and the semiconductor layer (20) at a density of 10 12 atoms/cm 2 or less, and which are formed of a metal element that is different from the constituent elements of the supporting substrate (10) and the semiconductor layer (20).